2DB1188P/q/r document number: ds31144 rev. 5 - 2 1 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r 40v pnp surface mount transistor in sot89 features ? epitaxial planar die construction ? low collector-emitter saturation voltage ? complementary npn type available (2dd1766) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot89 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? weight: 0.052 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel 2DB1188P-13 p23p 13 12 2,500 2db1188q-13 p23q 13 12 2,500 2db1188r-13 p23r 13 12 2,500 notes: 1. no purposefully added lead 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information p23x = product type marking code where p23p = 2DB1188P p23q = 2db1188q p23r = 2db1188r = manufacturers? code marking yww = date code marking y = last digit of year (ex: 1 = 2011) ww = week code (01 ? 53) top view device schematic pin out - top view sot89 c e b
2DB1188P/q/r document number: ds31144 rev. 5 - 2 2 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v continuous collector current i c -2 a peak pulse collector current i cm -3 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 1 w thermal resistance, junction to ambient (note 4) r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on 15mm x 15mm fr-4 pcb with high coverage of single sided 1 oz copper, in still air conditions
2DB1188P/q/r document number: ds31144 rev. 5 - 2 3 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r thermal characteristics 0 500 1000 1500 2000 2500 0 1 2 3 0 500 1000 1500 2000 2500 40.0 60.0 80.0 100.0 120.0 140.0 100m 1 10 10m 100m 1 r th vs area p d vs area 15x15mm 1oz single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 15x15mm 1oz derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 15x15mm 1oz t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 15x15mm 1oz single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) 2oz copper 1oz copper t amb =25c copper area (sqmm) maximum power (w) 2oz copper 1oz copper t amb =25c copper area (sqmm) thermal resistance (c/w)
2DB1188P/q/r document number: ds31144 rev. 5 - 2 4 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) collector-base breakdown voltage bv cbo -40 ? ? v i c = -50 a, i e = 0 collector-emitter breakdown voltage bv ceo -32 ? ? v i c = -1ma, i b = 0 emitter-base breakdown voltage bv ebo -5 ? ? v i e = -50 a, i c = 0 collector cutoff current i cbo ? ? -1 a v cb = -20v, i e = 0 emitter cutoff current i ebo ? ? -1 a v eb = - 4v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce ( sat ) ? -0.35 -0.8 v i c = -2a, i b = -0.2a dc current gain 2DB1188P h fe 82 ? 180 ? v ce = -3v, i c = -0.5a 2db1188q 120 270 2db1188r 180 390 small signal characteristics current gain-bandwidth product f t ? 120 ? mhz v ce = -5v, i c = -0.1a, f = 30mhz output capacitance c obo ? 20 ? pf v cb = -10v, f = 1mhz notes: 5. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 012 3 45 -v , collector emitter voltage (v) ce -i , c o lle c t o r c u r r e n t (a) c fig. 1 typical collector current vs. collector-emitter voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b 0.001 0.01 0.1 1 10 -i , collector current (a) c h, d c c u r r en t g ain fe fig. 2 typical dc current gain vs. collector current (2db1188q) 0 50 100 150 200 250 300 350 t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , c o lle c t o r emi t t e r saturation voltage (v) ce(sat) fig. 3 typical collector-emitter saturation voltage vs. collector current 0 0.1 0.2 0.3 0.4 0.5 0.6 t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base emi t t e r t u r n- o n v o l t a g e (v) be(on) fig. 4 typical base-emitter turn-on voltage vs. collector current t = 85c a t = 150c a t = -55c a t = 25c a v = -3v ce
2DB1188P/q/r document number: ds31144 rev. 5 - 2 5 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base emi t t e r sa t u r a t i o n v o l t a g e(v) be(sat) fig. 5 typical base-emitter saturation voltage vs. collector current t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0.01 0.1 1 10 100 v , reverse voltage (v) r c , output capacitance (pf) obo fig. 6 typical output capacitance characteristics 0 10 20 30 40 50 60 f = 1mhz 0 20 40 60 80 100 120 140 0102030405060708090100 i , emitter current (ma) e f , gain-bandwidth product (mhz) t fig. 7 typical gain-bandwidth product vs. emitter current package outline dimensions sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.43 d 4.40 4.60 d1 1.52 1.83 e 2.29 2.60 e 1.50 typ e1 3.00 typ h 3.94 4.25 l 0.89 1.20 all dimensions in mm e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 e1
2DB1188P/q/r document number: ds31144 rev. 5 - 2 6 of 6 www.diodes.com november 2011 ? diodes incorporated 2DB1188P/q/ r suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
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